2013. 7. 08 1/1 semiconductor technical data ktc9018 epitaxial planar npn transistor revision no : 4 high frequency low noise amplifier application. vhf band amplifier application. features h small reverse transfer capacitance : c re =0.65pf(typ.). h low noise figure : nf=2.2db(typ.) at f=100mhz. h high transition frequency : f t =800mhz(typ.). maximum rating (ta=25 ? ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ electrical characteristics (ta=25 ? ) note : h fe classification e:40 q 59, f:54 q 80, g:72 q 108, h:97 q 146, i:130 q 198 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =40v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =5v, i c =1ma 40 - 198 reverse transfer capacitance c re v ce =6v, f=1mhz, i e =0 - - 1.0 pf transition frequency f t v ce =10v, i c =8ma, f=100mhz 500 800 - mhz collector-base time constant c c h rbb? v ce =6v, i e =-1ma, f=30mhz - - 30 ps noise figure nf v ce =6v, i e =-1ma, f=100mhz - - 4.0 db power gain g pe 15 - - characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 20 ma emitter current i e -20 ma collector power dissipation *p c 625 mw 400 junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? *cu lead-frame : 625mw fe lead-frame : 400mw
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